Part Number Hot Search : 
SBR3045R KT8554BN G4PC30 1N5755B 61100 C557B M5000 3409C
Product Description
Full Text Search
 

To Download BUX98 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  savantic semiconductor product specification silicon npn power transistors BUX98 BUX98a d escription with to-3 package high voltage capability high current capability fast switching speed applications high frequency and efficiency converters linear and switching industrial equipment pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25  ) symbol parameter conditions value unit BUX98 850 v cbo collector-base voltage BUX98a open emitter 1000 v BUX98 400 v ceo collector-emitter voltage BUX98a open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current 30 a i cm collector current-peak ( tp <5 ms ) 60 a i b base current 8 a i bm base current-peak ( tp <5 ms ) 30 a p t total power dissipation t c <25 250 w t j junction temperature 200  t stg storage temperature -65~200  thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 0.7 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUX98 BUX98a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BUX98 400 v ceo(sus) collector-emitter sustaining voltage BUX98a i c =0.2a ; i b =0 450 v BUX98 850 v cer(sus) collector-emitter sustaining voltage BUX98a i c =1a; l=2mh 1000 v BUX98 i c =20a ;i b =4a v cesat-1 collector-emitter saturation voltage BUX98a i c =16a ;i b =3.2a 1.5 v v cesat-2 collector-emitter for BUX98a saturation voltage i c =24a ;i b =5a 5.0 v BUX98 i c =20a ;i b =4a v besat base-emitter saturation voltage BUX98a i c =16a ;i b =3.2a 1.6 v i ces collector cut-off current v ce =v ces ; v be =0 t c =125 0.4 4 ma i ceo collector cut-off current v ce =v ceo ; i b =0 2 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma h fe dc current gain i c =1a ; v ce =5v 15 50 switching times t on turn-on time 1.0 s t s storage time 3.0 s t f fall time for BUX98 i c =20a ;i b1 =-i b2 =4a; v cc =150v for BUX98a i c =16a ;i b1 =-i b2 =3.2a; v cc =150v 0.8 s
savantic semiconductor product specification 3 silicon npn power transistors BUX98 BUX98a package outline fig.2 outline dimensions


▲Up To Search▲   

 
Price & Availability of BUX98

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X